| Course Name | Solid State Devices |
| Course Code | 15ECE111 |
| Program | B. Tech. in Electronics and Communication Engineering |
| Semester | Two |
| Year Taught | 2019 |
Introduction to Semiconductor materials, Crystal Structure of Silicon and GaAs – Planes – directions – planes and planar atomic densities – Unit cell characteristics – Review of Quantum Mechanics – Dual Nature of Light and Electrons – Bohr model of atom, Uncertainty Principle – Time dependent and Time independent Schrodinger Wave equation – Infinite Potential well problem – Step Potential Function – Tunneling.
Molecular Orbital theory and formation of energy bands in semiconductors – Direct and Indirect band gap semiconductors – Charge carriers – Effective mass – Extrinsic and intrinsic semiconductors – Fermi Dirac Statistics and Fermi Level – Boltzman Statistics – Density of states – Equilibrium Carrier concentrations – Drift velocity and mobility – Temperature dependence of carrier concentration – mobility – and conductivity – Hall effect – Excess Carriers and photoconductivity – Diffusion of Carriers – Built in fields
Direct and indirect recombination – excess carrier lifetime – Steady State Carrier generation – Quasi Fermi levels – Continuity Equation – Haynes Shockley experiment – Equilibrium PN junctions – Band diagram – built in potential and electric field in space charge region – depletion width – Forward and Reverse Biased PN junction – Ideal Diode equation – Reverse bias breakdown – PN Junction diodes – MOSFET Physics – Threshold voltage – Fundamentals of BJT physics.
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