Publication Type:

Journal Article

Source:

IEEE Electron Device Letters, Volume 23, Number 10, p.594-596 (2002)

URL:

http://ieeexplore.ieee.org/document/1039178/?arnumber=1039178

Keywords:

4.8 to 5 nm, area dependence, area scaling factors, breakdown mechanism, Breakdown voltage, Dielectric breakdown, Dielectric materials, Dielectric measurements, Dielectric substrates, Dielectric thin films, Electric breakdown, Hafnium compounds, Hafnium oxide, hard breakdown, HfO/sub 2/ gate dielectrics, HfO/sub 2/-Si, leakage current, lifetime projection, MOS capacitor, MOS capacitors, MOS devices, physical thickness, reactive dc magnetron sputtering, Reliability, semiconductor device breakdown, semiconductor device reliability, soft breakdown, sputtered coatings, Stress, TDDB characteristics, ten-year lifetime, time-to-dielectric-breakdown distribution, Weibull distribution, Weibull slopes

Abstract:

Weibull slopes, area scaling factors, and lifetime projection have been investigated for both soft breakdown and hard breakdown for the first time, in order to gain a better understanding of, the breakdown mechanism of HfO/sub 2/ gate dielectrics. The Weibull slope /spl beta/ of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be /spl beta/ = 2, whereas that of the soft breakdown was about 1.4. Estimated ten-year lifetime has been projected to be -2 V.

Cite this Research Publication

Y. Hee Kim, Onishi, K., Kang, C. Seok, Cho, H. - J., Nieh, R., Dr. Sundararaman Gopalan, Choi, R., Han, J., Krishnan, S., and Lee, J. C., “Area dependence of TDDB characteristics for HfO2 gate dielectrics”, IEEE Electron Device Letters, vol. 23, pp. 594-596, 2002.

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