Publication Type:

Journal Article

Source:

Integrated Ferroelectrics, Taylor & Francis, Volume 19, Number 1-4, p.141-148 (1998)

URL:

https://doi.org/10.1080/10584589808012700

Abstract:

<p>Abstract We report for the first time Ba0.6Sr0.4TiO3 (BST 60/40) thin films with Mg additive fabricated by Metalorganic decomposition technique on platinum coated silicon substrates using acetate-alkoxide precursors.[1] The structural and electrical properties of the BST thin films were greatly changed by additions of Mg. The surface morphology of the films was smooth with a dense microstructure. The typical small signal dielectric constant and the loss factor for a 0.4 μm thick undoped BST films were 450 and 0.013, respectively, at an applied frequency of 100 kHz. The dielectric loss was significantly reduced by the Mg content. The tunability (ΔC/C0) was found to change from 20.7% to 5.8% as the Mg additive content was changed from 0 to 20 mol%. The films exhibited high resistivity of the order of 1012 Ω-cm even up to an applied electric field of 100 kV/cm.</p>

Cite this Research Publication

P. C. Joshi, Dr. Sasangan Ramanathan, Desu, S. B., Stowell, S., and Sengupta, S., “Characterization of Ba0.6Sr0.4TiO3 Thin Films with Mg Additive Fabricated by Metalorganic Decomposition Technique”, Integrated Ferroelectrics, vol. 19, pp. 141-148, 1998.