Publication Type:

Conference Paper

Source:

ECS (2004)

URL:

https://lirias.kuleuven.be/handle/123456789/67169

Cite this Research Publication

C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., and Dr. Sundararaman Gopalan, “Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures”, 2004.

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