Publication Type:

Conference Paper

Source:

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), IEEE (2002)

ISBN:

9780780373525

Accession Number:

7355096

Keywords:

bias temperature instability immunity, capacitor TDDB lifetime, Capacitors, CMOS device application, CMOS integrated circuits, Dielectric breakdown, dielectric charging effects, Dielectric thin films, Electric breakdown, Electrodes, elemental semiconductors, Hafnium compounds, Hafnium oxide, HfO2 device reliability, HfO2 scaling limits, HfO2-Si, integrated circuit reliability, Integrated circuit testing, leakage current, Leakage currents, MOS devices, MOSFET, MOSFET circuits, negative bias temperature instability, nitridation, NMOS capacitors, Permittivity, PMOS capacitors, PMOSFET, polysilicon gate electrodes, Si, Silicon, Stress, Temperature dependence, Thermal stability, time dependent dielectric breakdown

Abstract:

Time dependent dielectric breakdown and bias temperature instability of HfO2 devices with polysilicon gate electrodes are studied. Both N and PMOS capacitors have sufficient TDDB lifetime, whereas PMOS capacitors show gradual increase in the leakage current during stress. HfO2 PMOSFET's without nitridation have sufficient immunity against negative bias temperature instability. Bias temperature instability for NMOS can be a potential scaling limit for HfO2.

Cite this Research Publication

K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Krishnan, S., and Lee, J. C., “Charging effects on reliability of HfO2 devices with polysilicon gate electrode”, in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002.

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