Publication Type:

Conference Paper


ICECT 2011 - 2011 3rd International Conference on Electronics Computer Technology, Volume 4, Kanyakumari, p.384-388 (2011)





Comparison, Electric field effects, Electron mobility, Electrons, Field effect semiconductor devices, GaAs, Gallium alloys, Gallium arsenide, Gallium nitride, HEMTs, High electron mobility transistors, MESFET devices, Nanowires, Semiconducting gallium, Semiconductor device models, SNWTs, TEDs, Transconductance, Transistors, Vanadium


This work concentrates on the mathematical modeling of High Electron Mobility Transistors (HEMTs). Fermi-Dirac distribution characteristics of HEMTs and Silicon Nano-wire Transistors (SNWTs) were compared. Our mathematical modelling involves study of V-I characteristics, Electric field versus Drift velocity characteristics, ID electron density versus position characteristics, transconductance versus gate-source voltage characteristics, unity gain cut off frequency versus gate-length characteristics, mobility versus temperature characteristics and Density of states versus position characteristics. According to this model, Transferred Electron Devices (TEDs) has better drift velocity versus electric field characteristics compared to GaAs Metal Semiconductor Field Effect Transistors (MESFETs), and SNWTs have better V-I characteristics compared to HEMT. GaAs/AlGaAs HEMTs have better transconductance and unity gain cut-off frequency than GaAs HEMTs. HEMTs modelled using ballistic mobility method have better V-I characteristics compared to SNWTs. GaN HEMTs have high mobility compared to GaAs HEMTs. SNWTs have better density of states characteristics compared to GaN HEMTs. © 2011 IEEE.


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Cite this Research Publication

S. Na Menon and Narayanankutty, K. Ab, “Comparative study of mathematically modelled high electron mobility transistors and silicon nanowire transistors”, in ICECT 2011 - 2011 3rd International Conference on Electronics Computer Technology, Kanyakumari, 2011, vol. 4, pp. 384-388.