Publication Type:

Conference Paper

Source:

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) (2002)

URL:

http://ieeexplore.ieee.org/document/1015445/?arnumber=1015445&tag=1

Keywords:

10.3 A, 19 A, Annealing, Artificial intelligence, breakdown field, Capacitance-voltage characteristics, DC sputtering, Dielectric thin films, Dielectrics, drive current, Electric breakdown, EOT, Hysteresis, leakage current, Leakage currents, MOS capacitors, MOSFET, nitrogen, polysilicon-gated NMOSCAPs, self-aligned NMOSFET devices, sputtered coatings, subthreshold swing, TaN, TaN-gated NMOSCAP, TaN-gated NMOSFET, TEM analysis, temperature, Thermal stability, transmission electron microscopy, ultra-thin ZrO/sub 2/ gate dielectrics, ultra-thin ZrO/sub x/N/sub y/ gate dielectrics, Very large scale integration, zirconium compounds, ZrO/sub 2/, ZrO/sub x/N/sub y/

Abstract:

Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.

Cite this Research Publication

R. Nieh, Krishnan, S., Cho, H. - J., Kang, C. Seok, Dr. Sundararaman Gopalan, Onishi, K., Choi, R., and Lee, J. C., “Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices”, in 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002.

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