Publication Type:

Conference Paper


2016 International Conference on Communication and Signal Processing (ICCSP) (2016)



Accession Number:




active phased array RADAR system, class AB amplifier, field effect MMIC, gallium compounds, Gallium nitride, gallium nitride transistor, GaN, GaN HEMT, GaN-HEMT, HEMT integrated circuits, HEMTs, high power amplifier, High Power Amplifier (HPA), HPA, III-V semiconductors, Impedance, integrated circuit design, microwave amplifiers, Microwave transistors, MMIC, MMIC power amplifiers, Monolithic microwave integrated circuits, phased array radar, Power Added Efficiency, Power amplifiers, QTRM, quad trans-receive module, wide band gap semiconductors, X-band power amplifier analysis, X-band power amplifier design


This paper, deals with the design of a class AB, Gallium Nitride (GaN) transistor based High Power Amplifier (HPA) for Monolithic Microwave Integrated Circuits (MMICs). GaN transistor is selected because of its rugged nature and its capability to work in extreme conditions. The designed HPA is intended to be housed in a Quad Trans-Receive Module (QTRM) of an Active Phased Array RADAR system. The HPA delivers a gain of 10.2 dB and an output power of 37 dBm, as well as high efficiency over many octaves of bandwidth.

Cite this Research Publication

R. Yeshaswy, A. Pratheik, R. V. S. Karteek, R. S. Devi, and Dr. Dhanesh G. Kurup, “Design and analysis of a 6 Watt GaN based X-band power amplifier”, in 2016 International Conference on Communication and Signal Processing (ICCSP), 2016.