GaN based devices are in great demand due to its rugged characteristics at extreme conditions. In this paper, design of GaN monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) with coplanar waveguide matching is presented to understand the key aspects of high gain, low noise figure and high linearity. The LNA can be used in base station technologies as frequency of interest is from 0.6-3 GHz. It delivers gain of 23 dB and noise figure 0.3 dB and OIP3 upto 51 dBm. The linear performance presented here enables reconfigurable designs of LNA over multiple octaves of bandwidth.
S. Sarathkrishna, Balamurugan, K., Dr. Nirmala Devi M., and Dr. Jayakumar M., “Design and analysis of GaN HEMT based LNA with CPW matching”, in 2014 Eleventh International Conference on Wireless and Optical Communications Networks (WOCN), , 2014.