Publication Type:

Conference Paper

Source:

Proceedings of IEEE International Conference on Circuit, Power and Computing Technologies, ICCPCT 2017, Institute of Electrical and Electronics Engineers Inc. (2017)

ISBN:

9781509049660

URL:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85037341716&doi=10.1109%2fICCPCT.2017.8074167&partnerID=40&md5=d3c0616b6e7eb4ce00b22c2fd562341d

Keywords:

Armchair GNR (AGNR), Backscattering, Computer circuits, Drain current, Electrostatic effect, Exact analysis, Field effect transistors, Graphene, Graphene nano-ribbon, Graphene nanoribbon (GNR), Graphene transistors, Nanoribbons, Schottky barrier diodes, Schottky barriers, Short-channel effect, Single gate transistors, Threshold voltage

Abstract:

Single gate transistors will show a diverse effects after reaching the absolute limits of the scaling like short-channel effects and electrostatic effects. In this paper Tri-Gate Schottky Barrier Graphene Nanoribbon FET is proposed to suppress the effects of short-channel effects and increases the performance without increasing the width of the transistor. As the length of the channel increases the probability of electron being scattered from source to drain decreases so back scattering effect has been introduced for the exact analysis and the tri-gate concept has been introduced to increase the drain current. The results shown a tremendous increase in the drain current with this new design. © 2017 IEEE.

Notes:

cited By 0; Conference of 2017 IEEE International Conference on Circuit, Power and Computing Technologies, ICCPCT 2017 ; Conference Date: 20 April 2017 Through 21 April 2017; Conference Code:131156

Cite this Research Publication

K. M. S. Krishna and Sundari, B. B. T., “Design of Tri-Gate Schottky Barrier Graphene Nanoribbon field effect transistor”, in Proceedings of IEEE International Conference on Circuit, Power and Computing Technologies, ICCPCT 2017, 2017.

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