Publication Type:

Journal Article

Source:

International Journal of Applied Engineering Research, Volume 9, Number 24, p.27319-27330 (2014)

URL:

http://www.scopus.com/inward/record.url?eid=2-s2.0-84941312750&partnerID=40&md5=f4cf7837a350fe6ae2f7326ed61fb3dc

Keywords:

Current reuse, Inductive load, Millimeter wave (mm wave) parasitic, MOS based LNA, V-band

Abstract:

This paper presents the design of single stage, cascode Low Noise Amplifier (LNA) at V-band using current reuse topologies. First, the design of source inductor and gate inductor of cascode transistor are done by considering its small signal equivalents. For this, the output resistance, the internode resistance, the terminal and the gate-source capacitances of cascode amplifier are considered and exploited to determine the value of source and gate inductance. This results in compact and efficient LNA design. Compared to the conventional cascode design, the forward gains at 60 GHz using current reuse source inductor, gate inductor and its combination increases by 8.71%, 52.7% and 64.6% respectively. In second part, the proposed work describes the LNA circuit that uses the design of inductive load thereby achieving reduced VDD supply at common gate transistor. The forward gain and noise figure obtained from this method are 5.8 dB and 2.3 dB respectively. Power consumption of LNA design having inductive load is 7.43 mW that is comparatively lower than the conventional cascode design, which consumes 8.11 mW. For the two designs, IIP3 obtained are -3 dBm and -1 dBm respectively and found to be in good agreement with the expected response. © Research India Publications.

Cite this Research Publication

K. Balamurugan, M. Nirmala Devi, and Jayakumar, M., “Design of V-band low noise amplifier using current reuse topologies”, International Journal of Applied Engineering Research, vol. 9, pp. 27319-27330, 2014.