<p>In this paper, MOSFET modeling for millimeter wave integrated circuits is discussed. High frequency MOSFET is built using BSIM3v3 as intrinsic core and the parasitics due to HF are designed as extrinsic subcircuit. The proposed methodology is then used in designing a low power, mm-wave CMOS low noise amplifier. The operation of the circuit is simulated using a circuit simulator. The wideband characteristics are verified by implementing the LNA circuit with and without composite model. © 2011 Springer-Verlag.</p>
cited By (since 1996)0; Conference of org.apache.xalan.xsltc.dom.DOMAdapter@22cb2ca2 ; Conference Date: org.apache.xalan.xsltc.dom.DOMAdapter@48df5186 Through org.apache.xalan.xsltc.dom.DOMAdapter@3d6159ca; Conference Code:84611
Aa Raj, Karthigha, Bb, and Dr. Jayakumar M., “Designing and modeling of CMOS low noise amplifier using a composite MOSFET model working at millimeter-wave band”, Information Technology and Mobile Communication in the series Communications in Computer and Information Science, vol. 147 CCIS, pp. 297-300, 2011.