Publication Type:

Journal Article

Authors:

Raj, A.a; Karthigha, B.b; M. Jayakumar

Source:

Information Technology and Mobile Communication in the series Communications in Computer and Information Science, Springer, Volume 147 CCIS, Nagpur, Maharashtra, p.297-300 (2011)

ISBN:

9783642205729

URL:

http://www.scopus.com/inward/record.url?eid=2-s2.0-79955109062&partnerID=40&md5=0f2b0e41fac10f6a76c480ed583a37e0

Keywords:

Bsim3v3, Circuit simulation, CMOS integrated circuits, CMOS millimeter-wave integrated circuits, Composite models, high frequency (HF) behaviour, Information technology, Integrated circuits, integration, Low noise, Low noise amplifiers, Millimeter wave devices, Millimeter waves, Mobile telecommunication systems, Monolithic microwave integrated circuits, MOSFET devices

Abstract:

<p>In this paper, MOSFET modeling for millimeter wave integrated circuits is discussed. High frequency MOSFET is built using BSIM3v3 as intrinsic core and the parasitics due to HF are designed as extrinsic subcircuit. The proposed methodology is then used in designing a low power, mm-wave CMOS low noise amplifier. The operation of the circuit is simulated using a circuit simulator. The wideband characteristics are verified by implementing the LNA circuit with and without composite model. © 2011 Springer-Verlag.</p>

Notes:

cited By (since 1996)0; Conference of org.apache.xalan.xsltc.dom.DOMAdapter@22cb2ca2 ; Conference Date: org.apache.xalan.xsltc.dom.DOMAdapter@48df5186 Through org.apache.xalan.xsltc.dom.DOMAdapter@3d6159ca; Conference Code:84611

Cite this Research Publication

Aa Raj, Karthigha, Bb, and Jayakumar, M., “Designing and modeling of CMOS low noise amplifier using a composite MOSFET model working at millimeter-wave band”, Information Technology and Mobile Communication in the series Communications in Computer and Information Science, vol. 147 CCIS, pp. 297-300, 2011.