<p>A method is provided for manufacturing an integrated circuit having a semiconductor substrate with a semiconductor device. A dielectric layer is formed on the semiconductor wafer and an opening is formed in the dielectric layer. A barrier layer is deposited to line the opening and a conductor core is deposited to fill the channel opening over the barrier layer. The semiconductor wafer is then subjected to chemical-mechanical polishing using a differential pressure between the center of the semiconductor wafer and its periphery.</p>
K. S. Sahota, Dr. Krishnashree Achuthan, and Lopatin, S. D., “Differential pressure chemical-mechanical polishing in integrated circuit interconnects”, 2002.