Publication Type:

Conference Paper

Source:

Symposium on VLSI Technology (2001)

URL:

http://gistexel.com/wp-content/uploads/2014/09/2001_Proc.VLSI_.Sym_K.Onishi.pdf

Abstract:

Effect of dopant penetration on electrical characteristics of polysilicon gate HfOz gate dielectric MOSFET’s has been studied quantitatively, for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V,) but channel carrier mobility. Surface nitridation prior to Hf02 deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.

Cite this Research Publication

K. Onishi, Kang, L., Choi, R., Dharmarajan, E., Dr. Sundararaman Gopalan, Jeon, Y., Kang, C. Seok, Lee, B. Hun, Nieh, R., and Lee, J. C., “Dopant Penetration Effects on Polysilicon Gate HfO\~ 2 MOSFET's”, in Symposium on VLSI Technology, 2001.

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