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A FinFET-type semiconductor device includes a fin structure on which a relatively thin amorphous silicon layer and then an undoped polysilicon layer is formed. The semiconductor device may be planarized using a chemical mechanical polishing (CMP) in which the amorphous silicon layer acts as a stop layer to prevent damage to the fin structure.

Cite this Research Publication

K. Dr. Achuthan, Ahmed, S. S., Wang, H. H., and Yu, B., “Dual silicon layer for chemical mechanical polishing planarization”, 2004.