Publication Type:

Journal Article

Source:

Electron Device Letters, IEEE, IEEE, Volume 21, Number 4, p.181–183 (2000)

Cite this Research Publication

L. Kang, Lee, B. Hun, Qi, W. - J., Jeon, Y., Nieh, R., Dr. Sundararaman Gopalan, Onishi, K., and Lee, J. C., “Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric”, Electron Device Letters, IEEE, vol. 21, pp. 181–183, 2000.

207
PROGRAMS
OFFERED
5
AMRITA
CAMPUSES
15
CONSTITUENT
SCHOOLS
A
GRADE BY
NAAC, MHRD
9th
RANK(INDIA):
NIRF 2017
150+
INTERNATIONAL
PARTNERS