MOSCAPs of various combinations of Hafnium oxide and Titanium oxide of varying thickness with Aluminum as gate electrode have been fabricated and electrically characterized. The effects of voltage stress on the I-V characteristics for prolonged time durations have been studied and compared. Results showed hard breakdown and negligible degradation of reliability under stress.
S. Dutta, R, S., Dr. Sundararaman Gopalan, and Shankar, B., “Electrical Characterization and Reliability Analysis of HfO2-TiO2-Al MOSCAPs”. 2009.