A chemical etchant for the removal of titanium-tungsten containing structures from the semiconductors and a method for removing the titanium-tungsten. The etchant comprising a solution of hydrogen peroxide, a salt of EDTA, and an acid, the acid capable of preventing the deposition of tin oxide. The method of removal comprises first obtaining a wafer containing titanium-tungsten. Second, immersing the wafer having titanium-tungsten thereon for a predetermined period of time in an etchant bath comprising a solution of hydrogen peroxide, a salt of EDTA and an acid, the acid capable of preventing the deposition of tin oxide. Third, removing the treated wafer and rinsing the treated wafer and lastly, drying the wafer.
Dr. Madhav Datta, Kanarsky, T. Safron, Mathad, G. Swami, and Shenoy, R. V., “Etching of Ti-W for C4 rework”, U.S. Patent US 08/740,5691998.