Publication Type:

Journal Article


Applied physics letters, AIP Publishing, Volume 81, Number 9, p.1663–1665 (2002)


The effects of silicon surface nitridation on metal–oxide–semiconductor capacitors with zirconium oxide (ZrO2)(ZrO2) gate dielectrics were investigated. Surface nitridation was introduced via ammonia (NH3)(NH3) annealing prior to ZrO2ZrO2 sputter-deposition, and tantalum nitride (TaN) was used for the gate electrode. It was found that capacitors with the nitridation had thinner equivalent oxide thickness (∼8.7 Å), comparable leakage current, and slightly increased capacitance–voltage hysteresis as compared to samples without nitridation. Additionally, transmission electron microscopy pictures revealed that nitrided samples had a thicker interfacial layer (IL), which had a higher dielectric constant than that of the non-nitrided IL.

Cite this Research Publication

R. Nieh, Choi, R., Dr. Sundararaman Gopalan, Onishi, K., Kang, C. Seok, Cho, H. - J., Krishnan, S., and Lee, J. C., “Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics”, Applied physics letters, vol. 81, pp. 1663–1665, 2002.