Publication Type:

Journal Article

Source:

Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society, Volume 33, p.051210 (2015)

URL:

https://www.researchgate.net/publication/281285316_Fabrication_of_low_grass_smooth_sidewall_InGaAsP_by_methane-hydrogen_inductively_coupled_plasma_RIE_through_a_metal_lift-off_mask_patterned_by_e-beam_lithography

Abstract:

An optimized CH4+H2 inductively coupled-plasma reactive-ion-etching process for fabrication of high quality nanophotonic InGaAsP/InP waveguide device has been developed. Important parameters that influence e-beam lithography and etching have been optimized for a simple metal lift-off masked process. Smooth sidewalls with low grass content has been demonstrated for >3 μm etch depths in InGaAsP/InP using an Al lift-off etch mask.

Cite this Research Publication

Viswas Sadasivan, Dagar, S., and Das, U., “Fabrication of low grass, smooth sidewall InGaAsP by methane–hydrogen inductively coupled plasma RIE through a metal lift-off mask patterned by e-beam lithography”, Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society, vol. 33, p. 051210, 2015.

207
PROGRAMS
OFFERED
6
AMRITA
CAMPUSES
15
CONSTITUENT
SCHOOLS
A
GRADE BY
NAAC, MHRD
8th
RANK(INDIA):
NIRF 2018
150+
INTERNATIONAL
PARTNERS