Publication Type:

Patent

Source:

Number US 09/975,612 (2003)

URL:

https://www.google.com/patents/US6589887

Abstract:

The present invention pertains to methods for forming metal-derived layers on substrates. Preferred methods apply to integrated circuit fabrication. In particular, selective methods may be used to form diffusion barriers on partially fabricated integrated circuits. In one preferred method, a wafer is heated and exposed to a metal vapor. Under specific conditions, the metal vapor reacts with dielectric surfaces to form a diffusion barrier, but does not react with metal surfaces. Thus, methods of the invention form diffusion barriers that selectively protect dielectric surfaces but leave metal surfaces free of diffusion barrier.

Cite this Research Publication

J. Dalton, Powell, R. A., Kailasam, S. K., and Dr. Sasangan Ramanathan, “Forming Metal-derived Layers by Simultaneous Deposition and Evaporation of Metal”, U.S. Patent US 09/975,6122003.

It appears your Web browser is not configured to display PDF files. Download adobe Acrobat or click here to download the PDF file.

207
PROGRAMS
OFFERED
5
AMRITA
CAMPUSES
15
CONSTITUENT
SCHOOLS
A
GRADE BY
NAAC, MHRD
8th
RANK(INDIA):
NIRF 2018
150+
INTERNATIONAL
PARTNERS
  • Amrita on Social Media

  • Contact us

    Amrita Vishwa Vidyapeetham
    Amritanagar, Coimbatore - 641 112
    Tamilnadu, India
    • Fax: +91-422-2686274
    • Coimbatore : +91 (422) 2685000
    • Amritapuri   : +91 (476) 280 1280
    • Bengaluru    : +91 (080) 251 83700
    • Kochi              : +91 (484) 280 1234
    • Mysuru          : +91 (821) 234 3479
    • Contact Details »