Publication Type:

Journal Article

Source:

ECS Transactions, The Electrochemical Society, Volume 3, Number 15, p.27–36 (2007)

Abstract:

In this work we discuss the design requirements for achieving higher productivity ALD solutions and we present a single-wafer reactor design that incorporates improvement elements. The effectiveness of this approach is evaluated by examining the improved step coverage, saturation, uniformity and electrical properties of ZrO2 high-k films deposited using this reactor system.

Cite this Research Publication

J. Dalton, Kim, H. Young, Zhang, Z., Seidel, T., Karim, Z., and Dr. Sasangan Ramanathan, “High Performance ALD Reactor for High-k Films”, ECS Transactions, vol. 3, pp. 27–36, 2007.