In this work we discuss the design requirements for achieving higher productivity ALD solutions and we present a single-wafer reactor design that incorporates improvement elements. The effectiveness of this approach is evaluated by examining the improved step coverage, saturation, uniformity and electrical properties of ZrO2 high-k films deposited using this reactor system.
J. Dalton, Kim, H. Young, Zhang, Z., Seidel, T., Karim, Z., and Dr. Sasangan Ramanathan, “High Performance ALD Reactor for High-k Films”, ECS Transactions, vol. 3, pp. 27–36, 2007.