Publication Type:

Conference Paper

Source:

60th DRC. Conference Digest Device Research Conference, IEEE (2002)

ISBN:

9780780373174

Accession Number:

7501776

Keywords:

ammonia, Annealing, atomic layer deposition, breakdown fields, Capacitors, degradation, degraded MOSFET characteristics, dielectric hysteresis, Dielectric thin films, electrical characteristics, Gate leakage, Hafnium compounds, Hf(SiO/sub 3/)/sub 2/-Si, Hf-silicate devices, Hysteresis, leakage, Leakage currents, Life estimation, Lifetime estimation, MOS devices, MOSFET, MOSFETs, NH/sub 3/, NH/sub 3/ pre-treatment, oxidation, re-oxidation method, reliability characteristics, semiconductor device breakdown, semiconductor device reliability, semiconductor-insulator boundaries, ultra thin Hf(SiO/sub 3/)/sub 2/ films

Abstract:

The trade-offs between the benefits of NH/sub 3/ pre-treatment such as improved scalability, lower leakage and higher breakdown fields, and potential issues such as large hysteresis, degraded MOSFET characteristics and poorer reliability on Hf-silicate devices have been studied.

Cite this Research Publication

Dr. Sundararaman Gopalan, Choi, R., Onishi, K., Nieh, R., Kang, C. S., Cho, H. J., Krishnan, S., and Lee, J. C., “Impact of NH/sub 3/ pre-treatment on the electrical and reliability characteristics of ultra thin hafnium silicate films prepared by re-oxidation method”, in 60th DRC. Conference Digest Device Research Conference, 2002.

207
PROGRAMS
OFFERED
6
AMRITA
CAMPUSES
15
CONSTITUENT
SCHOOLS
A
GRADE BY
NAAC, MHRD
8th
RANK(INDIA):
NIRF 2018
150+
INTERNATIONAL
PARTNERS