Publication Type:

Conference Paper


IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. (2004)


Carrier mobility, Current measurement, DC characterization methods, DC mobility, degradation, Dielectric measurements, Electric variables, Electron traps, fast transient charging effects, FTCE model, High K dielectric materials, high-k device, High-K gate dielectrics, high-k implementation strategy, high-k transistors, intrinsic characteristics, intrinsic mobility, Pulse measurements, reliability test, semiconductor device measurement, Semiconductor device models, SiO2, Testing, Threshold voltage, Transistors, ultra-short pulsed I-V measurements, Vth instability


Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as Vth instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO2 devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.

Cite this Research Publication

B. H. Lee, Young, C. D., Choi, R., Sim, J. H., Bersuker, G., Kang, C. Y., Harris, R., Brown, G. A., Matthews, K., Song, S. C., Moumen, N., Barnett, J., Lysaght, P., Choi, K. S., Wen, H. C., Huffman, C., Alshareef, H., Majhi, P., Dr. Sundararaman Gopalan, Peterson, J., Kirsh, P., Li, H. J., Gutt, J., Gardner, M., Huff, H. R., Zeitzoff, P., Murto, R. W., Larson, L., and Ramiller, C., “Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)”, in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004.