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Mass Production Worthy HfO2-Al2O3 Laminates Capacitor Technology using Hf Liquid Precursor for sub-100 nm DRAMS

Publication Type : Conference Proceedings

Publisher : Techincal Digest, International Electron Devices Meeting

Source : Techincal Digest, International Electron Devices Meeting. pp. 221-224, 2002.

Campus : Coimbatore

School : School of Engineering

Department : Chemical

Year : 2002

Abstract :

Cite this Research Publication : J. H Lee, Kim J., Kim Y. S., S., J. H., Lee, N. I., Kang, H. K., Suh, K. P., Jeong, M. M., Hyun, K., Baik, H. S., Chung, Y. S., Liu, X., Dr. Sasangan Ramanathan, Seidel, T. E., Winkler, J., Londergan, A., Kim, H. Y., M., J., and Lee, N. K., “Mass Production Worthy HfO2-Al2O3 Laminates Capacitor Technology using Hf Liquid Precursor for sub-100 nm DRAMS”, Techincal Digest, International Electron Devices Meeting. pp. 221-224, 2002.

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