Publication Type:

Patent

Source:

Volume US6977224 B2, Number US 09/753,256 (2005)

URL:

https://www.google.com/patents/US6977224

Abstract:

A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, and introducing a conductive shunt material through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer overlying the device with an opening to the contact point, and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material.

Cite this Research Publication

V. M. Dubin, Thomas, C. D., McGregor, P., and Dr. Madhav Datta, “Method of electroless introduction of interconnect structures”, U.S. Patent US 09/753,2562005.

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