Publication Type:



Number 6887781, US 10/425,306, USA (2005)



Electronic components such as semiconductor wafer VLSI and ULSI integrated circuit devices are provided having a robust barrier layer in the device interconnects. The robust barrier layer provides excellent step coverage, low resistance and enhanced adhesion to CVD copper and the interconnect has a double structure of a layer of a barrier material and a metal layer thereon. The metal layer is preferably tungsten and is formed by replacing silicon or other such atoms on the surface of the barrier layer with tungsten metal. A layer of silicon can be formed on the barrier layer, silicon atoms can be formed on the surface by reacting the barrier layer with a silicon containing reactant or a silicon containing barrier layer can be used.

Cite this Research Publication

S. H. Lee and Dr. Sasangan Ramanathan, “Method for the Formation of Diffusion Barrier (Granted)”, U.S. Patent 6887781, US 10/425,3062005.

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