Publication Type:



Volume US6649511 B1, Number US 10/272,760 (2003)



<p>A manufacturing method provides a semiconductor substrate with a semiconductor device. A dielectric layer is formed on the semiconductor substrate and an opening provided therein. An barrier layer lines the opening and a seed layer is deposited to line the barrier layer. A conductor core fills the opening over the barrier layer to form a conductor channel. The seed layer is annealed to form an annealed region, which securely bonds the seed layer to the barrier layer and prevents electromigration along the surface between the seed and barrier layers.</p>

Cite this Research Publication

Dr. Krishnashree Achuthan and Marathe, A. P., “Method of manufacturing a seed layer with annealed region for integrated circuit interconnects”, U.S. Patent US 10/272,7602003.

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