Publication Type:






Shallow trench isolation techniques are disclosed in which a nitride layer is formed on a semiconductor substrate, and a trench is formed through the nitride layer and into the semiconductor substrate. The nitride layer is removed prior to filling the isolation trench, and the fill material is planarized using a fixed-abrasive CMP process to mitigate or avoid step height in the shallow trench isolation process.

Cite this Research Publication

K. Achuthan and Sahota, K., “Methods for trench isolation with reduced step height”. 2003.