MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage current and equivalent oxide thickness (EOT) of HfO/sub 2/ remain low (EOT of 12.0 /spl Aring/. HfO/sub 2/ with 1/spl times/10/sup -3/ A/cm/sup 2/ at Vg=1.0 V). Reasonable N- and P-MOSFET characteristics such as subthreshold swing of 74 mV/decade and output currents were also demonstrated.
L. Kang, Onishi, K., Jeon, Y., Lee, B. Hun, Kang, C., Qi, W. - J., Nieh, R., Dr. Sundararaman Gopalan, Choi, R., and Lee, J. C., “MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics”, in International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000.