Publication Type:

Patent

Source:

(2006)

URL:

http://www.google.com/patents/US7125776

Abstract:

A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial “rough” planarization and then a “fine” planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.

Cite this Research Publication

Dr. Krishnashree Achuthan, Ahmed, S. S., Wang, H. H., and Yu, B., “Multi-step chemical mechanical polishing of a gate area in a FinFET”, 2006.

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