Publication Type:

Journal Article

Source:

Optical and Quantum Electronics, Volume 50, Issue 2, p.76 (2018)

URL:

https://doi.org/10.1007/s11082-018-1347-x

Abstract:

Embedded Rings (ER) have been fabricated on InGaAsP/InP multi-quantum wells (MQW) using electron beam lithography and methane + hydrogen reactive ion etching through Cr/SiO2 etched mask. The ER showed a spectrum with interfering resonance modes which has been positively compared with simulation. The device has been used to demonstrate low speed nonlinear tuning of 2 nm with 10 mW input optical power.

Cite this Research Publication

Viswas Sadasivan and Das, U., “Nonlinear tuning in InGaAsP Embedded Rings”, Optical and Quantum Electronics, vol. 50, no. 2, p. 76, 2018.

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