Publication Type:

Conference Paper

Source:

International Electron Devices Meeting (1998)

Cite this Research Publication

H. - J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., “Novel Nitrogen Profile Engineering for Improved TaN/HfO\~ 2/Si MOSFET Performance”, in International Electron Devices Meeting, 1998.

207
PROGRAMS
OFFERED
6
AMRITA
CAMPUSES
15
CONSTITUENT
SCHOOLS
A
GRADE BY
NAAC, MHRD
8th
RANK(INDIA):
NIRF 2018
150+
INTERNATIONAL
PARTNERS