Publication Type:

Conference Paper

Source:

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)

Keywords:

Annealing, Boron, boron penetration suppression, Dielectric devices, Dielectric substrates, Dielectric thin films, gate dielectrics, Hafnium compounds, Hafnium oxide, HfO/sub 2/ gate dielectric, HfO/sub 2/:N, Hysteresis, Interface states, low interfacial trap density, MOS capacitors, MOSFET, MOSFET characteristics, MOSFET circuits, N profile engineering, nitrogen, oxidation, rapid thermal annealing, reactive sputtering method, reoxidation anneal, Silicon, sputter deposition, Sputtering, TaN-HfO/sub 2/-Si, TaN/HfO/sub 2//Si MOSFET performance, tantalum compounds, temperature, Thermal engineering, Thermal stability

Abstract:

A novel technique to tailor the nitrogen profile in HfO/sub 2/ gate dielectric has been developed. Nitrogen was incorporated in the upper layer of HfO/sub 2/ using a reactive sputtering method, followed by a reoxidation anneal. The resulting dielectrics showed good thermal stability, boron penetration suppression, low interfacial trap density, plus lower hysteresis and improved MOSFET characteristics, in comparison to both non-nitrided and bottom nitrided (via Si-surface nitridation with NH/sub 3/) devices.

Cite this Research Publication

H. J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., “Novel nitrogen profile engineering for improved TaN/HfO/sub 2//Si MOSFET performance”, in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001.

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