Publication Type:

Journal Article

Source:

Chemistry of Materials, Volume 25, Number 3, p.266-276 (2013)

URL:

http://dx.doi.org/10.1021/cm301660n

Abstract:

A series of diorganotin complexes of dithiocarbamates [Sn(C4H9)2(S2CN(RR′)2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′)2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5–8, and double-step decomposition for the complexes 2 and 4 between 195 °C and 325 °C. Complexes 1–4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 °C to 530 °C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV–vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.

Cite this Research Publication

K. Ramasamy, Kuznetsov, V. L., Dr. Gopal K., Malik, M. A., Raftery, J., Edwards, P. P., and O’Brien, P., “Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)”, Chemistry of Materials, vol. 25, pp. 266-276, 2013.

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