Publication Type:

Patent

Source:

Number US 10/262,992, USA (2004)

URL:

https://www.google.com/patents/US6720259

Abstract:

A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.

Cite this Research Publication

A. R. Londergan, Dr. Sasangan Ramanathan, Winkler, J., and Seidel, T. E., “Passivation Method for Improved Uniformity and Repeatability for Atomic Layer Deposition and Chemical Vapor Deposition”, U.S. Patent US 10/262,9922004.

It appears your Web browser is not configured to display PDF files. Download adobe Acrobat or click here to download the PDF file.

207
PROGRAMS
OFFERED
5
AMRITA
CAMPUSES
15
CONSTITUENT
SCHOOLS
A
GRADE BY
NAAC, MHRD
9th
RANK(INDIA):
NIRF 2017
150+
INTERNATIONAL
PARTNERS