Publication Type:

Conference Paper

Source:

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537) (2001)

Keywords:

Amorphous magnetic materials, Annealing, Argon, Dielectric thin films, Electrodes, Hafnium compounds, Hafnium oxide, High K dielectric materials, high-k gate dielectric, High-K gate dielectrics, MOS capacitors, MOSCAP, MOSFET, nitridation, nitrogen, nitrogen incorporation, poly/HfO/sub 2/ structure, Si-HfO/sub 2/, Silicon, surface nitridation, TaN-HfO/sub 2/, TaN/HfO/sub 2/ structure, tantalum compounds, Tin, top nitridation

Abstract:

In the coming MOS generations, scaling trends will force the replacement of SiO/sub 2/ as the gate dielectric. Due to constraints - primarily high gate leakage current - SiO/sub 2/ will likely be replaced by a high dielectric constant or high-k material. This paper will attempt to address some of the high-k material concerns by presenting promising results on HfO/sub 2/ stack structures with two forms of nitrogen incorporation - surface nitridation and top nitridation.

Cite this Research Publication

R. Nieh, Onishi, K., Choi, R., Cho, H. - J., Kang, C. Seok, Dr. Sundararaman Gopalan, Krishna, S., and Lee, J. C., “Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices”, in Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537), 2001.

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