Publication Type:

Conference Paper

Source:

2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT) (2016)

ISBN:

9781467399395

URL:

http://ieeexplore.ieee.org/abstract/document/7755594/

Keywords:

absorption, back metal electrode, band structure, current-voltage characteristics, dark condition, device cross section, Double diode, Electrochemical electrodes, FESEM image, Fluorine, Gold, Heterojunction, Heterojunctions, illuminated condition, IV-VI semiconductors, lead, Lead compounds, Multiple excietion Generation, organometallic synthesis, PbSe, PbSe quantum dot, Photonics, Photovoltaic cells, photovoltaic study, quantum dot, Quantum dots, scanning electron microscopy, Schottky barriers, Schottky diodes, Schottky junction, Semiconductor quantum dots, SnO:F, Solar cells, Tin Compounds, TiO2-PbSe-Au, Titanium compounds

Abstract:

The PbSe quantum dots are synthesized by organometallic synthesis method. The current-voltage (J-V) characteristics of TiO2/PbSe quantum dot (QD) solar cells from a Schottky junction that forms at the back metal electrode opposing the desirable diode formed between the TiO2 and PbSe QD layers. We study the J-V curves of the FTO/TiO2/PbSe/Au device under dark and illuminated condition. The FESEM image of the device cross section is taken and analyzed. We also study the band structure of the device.

Cite this Research Publication

S. Mohan, Dr. Sreekala C. O., Tom, A. E., Thomas, A., and Ison, V. V., “Photovoltaic studies of PbSe quantum dot based solar cells”, in 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), 2016.

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