Publication Type:

Conference Paper

Source:

International Conference on Communication and Signal Processing, ICCSP 2014, Institute of Electrical and Electronics Engineers Inc., Melmaruvathur , p.597-601 (2014)

ISBN:

978-1-4799-3357-0

URL:

http://www.scopus.com/inward/record.url?eid=2-s2.0-84916198898&partnerID=40&md5=cf728457ee27678f2c1a6a6898da3b52

Keywords:

Comsol multiphysics, Deflection (structures), Diaphragms, Different shapes, Geometry, Germanium, Insulator materials, Material change, Mechanical device, MEMS, MEMS pressure sensor, Piezoresistive properties, Piezoresistivity, pressure, Pressure sensors, Signal processing, Silicon carbide, Stresses

Abstract:

The work presented in this paper relates to optimizing the VLSI layout geometry of a Piezoresistive MEMS Pressure Sensors. MEMS is the technology of miniaturizing mechanical devices with the aid of Electrical support. The study is conducted through the analysis of diaphragms made out of semiconductor and insulator materials. The Piezoresistive property of materials are used here where the resistivity of the material changes on application of pressure. The optimal diaphragm shape is decided by studying the deflection, stress, and output voltage. Three different shapes are considered for the studies, Circular, Square, and Rectangular. The stress, deflection, and output voltage are analyzed using COMSOL Multiphysics software and the observed results are included in the paper.

Notes:

cited By 0; Conference of 3rd International Conference on Communication and Signal Processing, ICCSP 2014 ; Conference Date: 3 April 2014 Through 5 April 2014; Conference Code:109144

Cite this Research Publication

R. K. Megalingam and Lal, L. S., “Piezoresistive MEMS pressure sensors using Si, Ge, and SiC diaphragms: A VLSI layout optimization”, in International Conference on Communication and Signal Processing, ICCSP 2014, Melmaruvathur , 2014, pp. 597-601.