The performance of polysilicon gate HfO/sub 2/ MOSFET's is discussed in terms of gate leakage current and the effects of NH/sub 3/ surface nitridation on boron penetration and carrier mobility. Negative bias temperature instability (NBTI) on HfO/sub 2/ PMOSFET's was evaluated for the first time. Although surface nitridation enhanced NBTI degradation, HfO/sub 2/ PMOSFET's without nitridation show sufficient NBTI immunity.
K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., “Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET's”, in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001.