Publication Type:

Patent

Source:

Volume US6917106 B2, Number US 10/868,150 (2005)

URL:

https://www.google.com/patents/US6917106

Abstract:

A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.

Cite this Research Publication

Dr. Madhav Datta, “Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps”, U.S. Patent US 10/868,1502005.

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