Publication Type:



Volume US6750133 B2, Number US 10/279,478 (2004)



A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.

Cite this Research Publication

Dr. Madhav Datta, “Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps”, U.S. Patent US 10/279,4782004.