MOSCAPs and MOSFETs of a single-layer thin HfO2 gate dielectric with n+ polysilicon gate were fabricated and characterized. Polysilicon process was optimized such that leakage current and equivalent oxide thickness of HfOz remained low. Excellent C-V properties (e.g. low Dit and frequency dispersion) and reliability characteristics were obtained. Reasonable MOSFET quality was also demonstrated.
L. Kang, Jeon, Y., Onishi, K., Lee, B. Hun, Qi, W. - J., Nieh, R., Dr. Sundararaman Gopalan, and Lee, J. C., “Single-Layer Thin HfO\~ 2 Gate Dielectric with n+-Polysilicon Gate”, in SYMPOSIUM ON VLSI TECHNOLOGY, 2000.