Publication Type:

Conference Proceedings

Source:

International Conference on Signal Processing and Integrated Networks (SPIN), 2014 , IEEE, Noida, Delhi-NCR, India, p.739 - 743 (2014)

ISBN:

9781479928651

URL:

https://www.scopus.com/record/display.uri?eid=2-s2.0-84902449182&origin=resultslist&sort=plf-f&src=s&

Keywords:

Gallium Nitride (GaN), High-electron mobility transistor (HEMT), Parameter extraction, Small-signal modelling

Abstract:

A new 18-element small-signal model for GaN high electron mobility transistor is presented to operate at very high frequencies around 70 GHz. This model accounts for the need of a capacitor to represent the capacitive effect between the end of the drain electrode and contacting pad of the gate electrode. An extrinsic parasitic gate-drain capacitance as for higher frequencies this parameter becomes significant even under cold-FET conditions. This novel approach compensates for the high linear dependency of inductance at such high frequencies and the improved performance is evident in the S-parameter modelled. The validity of the proposed model has been well-illustrated up to 100 GHz frequency by the modelled S-parameters.

Cite this Research Publication

B. S. Mahalakshmi, Manikantan, S., Bhavana, P., Prem, A. M., SaiEknaath, R. S. S., and M. Nirmala Devi, “Small signal modelling of GaN HEMT at 70GHz”, International Conference on Signal Processing and Integrated Networks (SPIN), 2014 . IEEE, Noida, Delhi-NCR, India, pp. 739 - 743, 2014.