Publication Type:

Journal Article

Source:

Advances in Intelligent Systems and Computing, Springer Verlag, Volume 394, p.249-258 (2016)

ISBN:

9788132226543

URL:

http://www.scopus.com/inward/record.url?eid=2-s2.0-84959075028&partnerID=40&md5=44ea411617d3b9cea7577df6772040c2

Keywords:

6t sram cells, 90 nm technology, Artificial intelligence, Butterfly, Butterfly curves, Cadence, Compact structures, Computer programming, Computer science, Modes of operation, Static noise margin

Abstract:

This report describes the SNM calculation and analysis of SRAM cell which are obtained from simulations performed in Cadence Virtuoso 90 nm technology. The SRAM cell structure is implemented with a compact structure of six transistors. Static noise margin is found from the butterfly curve obtained for read, write, and hold modes of operation. © Springer India 2016.

Notes:

cited By 0; Conference of International Conference on Artificial Intelligence and Evolutionary Computations in Engineering Systems, ICAIECES 2015 ; Conference Date: 22 April 2015 Through 23 April 2015; Conference Code:164469

Cite this Research Publication

A. A. Jose and Balan, N. C., “Static noise margin analysis of 6T SRAM cell”, Advances in Intelligent Systems and Computing, vol. 394, pp. 249-258, 2016.

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