This report describes the SNM calculation and analysis of SRAM cell which are obtained from simulations performed in Cadence Virtuoso 90 nm technology. The SRAM cell structure is implemented with a compact structure of six transistors. Static noise margin is found from the butterfly curve obtained for read, write, and hold modes of operation. © Springer India 2016.
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A. A. Jose and Balan, N. C., “Static noise margin analysis of 6T SRAM cell”, Advances in Intelligent Systems and Computing, vol. 394, pp. 249-258, 2016.