Publication Type:

Journal Article

Source:

Electron Device Letters, IEEE, IEEE, Volume 23, Number 5, p.249–251 (2002)

Cite this Research Publication

H. - J. Cho, Kang, C. Seok, Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Krishnan, S., and Lee, J. C., “Structural and electrical properties of HfO 2 with top nitrogen incorporated layer”, Electron Device Letters, IEEE, vol. 23, pp. 249–251, 2002.

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