Publication Type:

Journal Article


Crystal Research and Technology, WILEY-VCH Verlag, Volume 46, Number 3, p.261–266 (2011)



CdSe, II-VI, semiconductor, thin film


CdSe:In films were prepared by electron beam evaporation technique using CdSe and In2Se3 (purity ∼99.9%) pellets. The crystal structure of the films with and without Indium, measured by X-ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks. X-ray photoelectron spectroscopy (XPS) studies indicated binding energies corresponding to 54 eV (Se3d5/2), 444 eV (In 3d5/2), 411 eV (Cd 3d3/2), (Cd 3d5/2). Atomic force microscope (AFM) studies indicated a uniform surface.The grain size decreases with increase of In doping. A decrease in the band gap was observed with increase of dopant concentration. Resistivity of the films is in the range of 10-3 Ωcm. Carrier density was in the range of 1021 cm-3 for the films. The photolumineasenec spectra (PL) spectra indicated three peaks. The peak intensity decreases as the Indium concentration increases. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)


cited By (since 1996)7

Cite this Research Publication

M. G. Syed Ah Basheer, S., R. K., Vidhya, V. S., Swaminathan, V., Thayumanavan, A., Murali, K. R., and Jayachandran, M., “Structural, Optical, Electrical and Luminescence Properties of Electron Beam Evaporated CdSe:In Films”, Crystal Research and Technology, vol. 46, pp. 261–266, 2011.