Publication Type:

Journal Article


J. Mater. Chem. A, The Royal Society of Chemistry, Volume 3, p.4147-4154 (2015)



Semiconducting Cu(In{,}Ga)(S{,}Se)2 (CIGSSe) thin-film is prepared by the spray-pyrolysis of aqueous precursor solutions of copper (CuCl2){,} indium (InCl3){,} gallium (GaCl3){,} and sulphur (SC(NH2)2) sources. The non-vacuum approach of making the CIGSSe thin film using environmentally benign halide-based aqueous precursor solutions paves the way for fabricating solar cells at a much cheaper cost. Here{,} gallium (Ga) is incorporated into the host lattice of CuIn(S{,}Se)2 (CISSe) films grown on a Mo-coated soda-lime glass substrate to modify the optoelectronic properties of CIGSSe films. The bandgap engineered{,} Ga-doped CIGSSe film leads to better photovoltaic characteristics and shows one of the highest efficiency for CIGS thin film solar cell made by the non-vacuum deposition of environmentally-friendly precursors. The optimum efficiency of solar cells with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO show j-V characteristics of Voc = 0.621 V{,} jsc = 24.29 mA cm-2{,} FF = 69.84%{,} and a power conversion efficiency of 10.54% under simulated AM 1.5{,} 100 mW cm-2 illuminations{,} demonstrating its potential in making a cost-effective thin film solar cell.

Cite this Research Publication

M. Anower Hossain, Tianliang, Z., Keat, L. Kian, Xianglin, L., Prabhakar, R. R., Batabyal Sudip Kumar, Mhaisalkar, S. G., and Wong, L. H., “Synthesis of Cu(In,Ga)(S,Se)2 thin films using an aqueous spray-pyrolysis approach, and their solar cell efficiency of 10.5%”, J. Mater. Chem. A, vol. 3, pp. 4147-4154, 2015.