Publication Type:

Conference Paper

Source:

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), IEEE (2000)

URL:

http://ieeexplore.ieee.org/document/843893/?arnumber=843893

Keywords:

Acceleration, Activation energy, Arrhenius plot, Breakdown voltage, Capacitance, Capacitance-voltage characteristics, charge trapping, Dielectric breakdown, Dielectric thin films, effective voltage-ramp breakdown field, Electric breakdown, gate dielectric, High K dielectric materials, High-K gate dielectrics, integrated circuit reliability, operating voltage, Reliability, Si, Silicon, Sputtering, temperature sensors, zirconium compounds, ZrO2

Abstract:

Temperature effect on the reliability of ZrO2 gate dielectric has been presented. High effective voltage-ramp breakdown field was observed. The activation energy of temperature accelerated voltage-ramp breakdown calculated from Arrhenius plot indicates that the breakdown of ZrO2 is less sensitive to temperature than a thermal oxide of similar electrical thickness. ZrO2 films exhibit excellent TDDB characteristics with low charge trapping and no stress induced leakage current. The field and temperature acceleration for TDDB for the 15.8 Å capacitance equivalent oxide thickness (CET) ZrO2 shows that the activation energy for TDDB falls into the range reported for oxide from 39 Å to 150 Å. It was found that the extrapolated 10-year lifetime operating voltage can be as high as -1.9 V, even at 150°C based on the “log(tBD) vs E” extrapolation model for a film with a CET of 15.8 Å

Cite this Research Publication

W. - J. Qi, Nieh, R., Onishi, R., Lee, B. Hun, Kang, L., Jeon, Y., Dr. Sundararaman Gopalan, and Lee, J. C., “Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon”, in 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), 2000.

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