Publication Type:



Volume US6740427 B2, Number US 09/961,037 (2004)



The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.

Cite this Research Publication

Dr. Madhav Datta, Emory, D., Huang, T. -luh, Joshi, S. M., King, C. A., Ma, Z., Marieb, T., Mckeag, M., Suh, D., Yang, S., and , “Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same”, U.S. Patent US 09/961,0372004.